| 摘要 |
PURPOSE:To improve an output level by forming the first conduction type of the third semiconductor domain for information storage widthwise to cross the channel part on the surface of the second conduction type of the second semiconductor domain. CONSTITUTION:An n<+>-type source domain 2 and an n<+>-type drain domain 3 are formed on a p-type semiconductor substrate 1, and a gate electrode 8 is provided between both domains 2, 3 by way of a gate insulating film 7. An n-type semiconductor domain 4 is formed such that it comes in contact with the side of the n<+>- type drain domain 3 which is opposite to the n<+>-type source domain 2, and a p- type semiconductor domain 5 for information storage and a p<->-type semiconductor domain 6 are formed on the surface of the domain 4. |
