| 摘要 |
<p>The method includes a sequence of deposition, masking, and etching steps, and produces an improved self-aligned MESFET. The MESFET has a light acceptor (or donor) impurity doped substrate (65), and light donor (or acceptor) region (55) with a graded doping profile disposed over the substrate (65) for operation as a gate channel region. First and second heavy donor (or acceptor) regions (50, 60) are disposed over the substrate (65) and are adjacently stepped down on either side of the light donor (or acceptor) region (55) for operation as source and drain regions. A schottky contact (35) is disposed over the light donor (or acceptor) region (55), and first and second ohmic contacts (25, 30) are disposed over parts of the first and second heavy donor (or acceptor) regions (50, 60) as source and drain connections. First and second oxide regions (40, 50) are disposed between the schottky contact (35) and each of the ohmic contacts (25, 30), the oxide regions (40, 45) being disposed respectively over part of the heavy donor (or acceptor) regions (50, 60) for inter-layer isolation relative to the light donor (or acceptor) region (55).</p> |
