BULK CHARGE COUPLED DEVICES WITH READ OUT GATES

摘要

Semiconductor device in which information representing packets of charge carriers are stored and transferred in the bulk of a semiconductor layer and comprising one or more read-out insulated gate field effect transistor structures having their channel regions located above the storage sites the current flow between a transistor source and drain constituting non-destructive read-out of the charge content of the storage site underliving the transistor channel region.