发明名称 INFRARED RAY CAMERA
摘要 PURPOSE:To improve the reliability of an infrared ray camera by arranging oppositely a multiple semiconductor substrate having a number of infrared ray detecting elements formed with mesa pn-junctions and a transfer unit for transferring signal charge from the detecting elements. CONSTITUTION:An electrode 34 is adhered with adhesive 35 onto a silicon substrate 36 capable of transmitting infrared rays excluding a light receiving portion 31 formed later, and a mesa light receiving portion 31 is formed with pn-junctions 32 among the electrode 34. Then, an In electrode 40 is mounted on the top surface 39 of the portion 31 while projecting the electrode 40, and a protecting anodoxdization film 33 is coated from the mesa side surface on the electrode 34. On the other hand, a transfer unit having an input diode 38, an input gate electrode 42, a storage gate electrode 43 and an output gate electrode 44 on a silicon substrate 37 surrounded by a channel stop 48 is arranged at the side opposite to the portion 31, and the electrode 40 of the portion 31 is made contact with the diode 38. Thus, even if temperature is altered, no displacement occurs between the diode 38 and the electrode 40 as coupled.
申请公布号 JPS5568684(A) 申请公布日期 1980.05.23
申请号 JP19780142694 申请日期 1978.11.17
申请人 FUJITSU LTD 发明人 TAKIGAWA HIROSHI;DOI SHIYOUJI;IMAI SOUICHI
分类号 H04N5/33;H01L27/146;H01L27/148;H01L31/10 主分类号 H04N5/33
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