发明名称 PATTERN FORMATION
摘要 PURPOSE:To provide an enhanced sensitivity and high resolution by a method wherein a methacrylic anhydride polymer is used to form a resist film, ionized radiation is used to draw a pattern, and a mixed solvent of a specific composition is used to develop the pattern. CONSTITUTION:A positive-type resist film consisting of a methacrylic anhydride polymer is formed on a substrate. Then, a pattern is drawn on the desired portion of the resist film by use of irradiation of ionized radiation such as electron beam, X ray, gamma ray , and alpha ray. The pattern is developed by using a solvent mixture of at least one selected from the group consisting of dimethylforamide, dimethylacetoamide. N-methylpyrrolidine, and dimethylsufoxide, and at least one selected from aromatic organic solvents, keton based organic solvents, and ester based organic solvents. This increases the ratio of development selectivity between radiation exposed and nonexposed portions. Thus, this provides an enhanced sensitivity and high resolution by preventing nonradiated portion from being decreased in its film thickness.
申请公布号 JPS5568630(A) 申请公布日期 1980.05.23
申请号 JP19780141790 申请日期 1978.11.17
申请人 CHO LSI GIJUTSU KENKYU KUMIAI 发明人 MIURA AKIRA;HIDEYAMA AKIZOU;TOUKAWA IWAO
分类号 G03F1/00;G03F1/68;G03F1/80;G03F7/039;G03F7/32;H01L21/027 主分类号 G03F1/00
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