Liq. phase epitaxial growth of semiconductor crystal - with treatment of substrate with gas atmos. contg. additive to clean surface

摘要

In the prodn. of a semiconductor crystal from the liquid phase, a gas phase material (I) other than hydrogen and inert gas is allowed to flow, in addn. to a gas atmos. (II) for the liq. phase growth technique, at least immediately before bringing a semiconductor substrate into contact with a liq. melt. Pref. (I) is (a halogen cpd. of) an element present in the substrate or the melt, a H halide or a halogen cpd. of a dopant for the epitaxial layer. The substrate and melt contain AIIIBV cpd(s). In particular, the substrate is GaAs and (II) is hydrogen contg. 7 x 10-5 to 2 x 10-3 mole % arsenic trichloride as (I). Method cleans the substrate surface. It is useful for various semiconductor materials, esp. AIIIBV cpds., e.g. GaAs.