| 摘要 |
PURPOSE:To obtain this device that the processes of manufacture also such as ion injection are not added, the number of terminals is not also increased, bias voltage is also omitted and detects charge at high-speeds. CONSTITUTION:A FETQ1, which connects a gate to a floating diffusion region of a charge transfer device, and a drain of a FETQR for reset are connected to a common voltage terminal VDD, and DC voltage lower than transfer pulse voltage is continually applied to a terminal OG of an output gate 7 of the transfer device so that transfer charge not flow into an output diode 31. A gate of a FETQ2, the load of the FETQ1, is connected to the terminal OG, and the voltage is utilized. To set drain currents to the gate bias voltage given at fixed value, the dimensions of the gate of the FETQ2 chipped are beforehand adjusted properly. Since the DC conductance of the FETQ2 can be increased to adequate value according to this method, the discharge time of outside circuit capacity can be shortened, and high-speed properties can be kept. |
