发明名称 |
SEMICONDUCTOR DEVICES AND METHOD OF MANUFACTURING THE SAME |
摘要 |
The semiconductor device comprises a semiconductor substrate, a polycrystalline silicon semiconductor body extending upwardly from a portion of the surface of the semiconductor substrate and containing an impurity at a substantially uniform concentration, and a metal electrode disposed on the top surface of the polycrystalline silicon semiconductor body. The metal electrode extends in the lateral direction beyond the periphery of the top surface of the polycrystalline silicon semiconductor body. |
申请公布号 |
GB1567808(A) |
申请公布日期 |
1980.05.21 |
申请号 |
GB19770029352 |
申请日期 |
1977.07.13 |
申请人 |
NIPPON TELEGRAPH & TELEPHONE PUBLIC CORP |
发明人 |
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分类号 |
H01L21/3205;H01L21/28;H01L21/288;H01L21/331;H01L21/768;H01L23/532;H01L29/41;H01L29/43;H01L29/45;H01L29/73;(IPC1-7):01L23/48 |
主分类号 |
H01L21/3205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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