Fe Ion implantation into semiconductor substrate for reduced lifetime sensitivity to temperature

摘要

A method of an iron Fe ion implantation into a semiconductor substrate of an N-type conductivity is disclosed. The method comprises the steps of implanting Fe ions into an N-type semiconductor substrate from its one surface with the dose amount of 1010 to 1015 cm-2 and heat-treating the semiconductor substrate with Fe ions at 850 DEG to 1250 DEG C. to control the lifetime of the minority carrier in the substrate and hence to reduce the temperature dependency of the lifetime.