| 摘要 |
A monolithic memory array including an NPN emitter follower and low threshold amorphous material storage device at each cell without additional cell isolation. An N-type substrate forms a common collector, a plurality of spaced rows of P-type regions form the bases and a plurality of N-type regions form emitters. The amorphous devices are formed over the space between the P-type regions and are longitudinally aligned with a respective emitter and base contact area.
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