| 摘要 |
Each sensor consists of a spinel substrate in the form of a beam or a diaphragm which carries a pattern of a plurality of doped silicon piezoresistive resistors. The latter are formed from layers of doped silicon, each of which layers has been epitaxially grown on a corresponding surface of the spinel substrate. The spinel minimizes the occurrence of leakage currents with respect to the resistors, while cooperating with the silicon to provide a high degree of stress transmission to the resistors. The beam form of sensor is shown as the sensor member of a differential fluid pressure to electric signal transducer, wherein the sensor is deflected and strained in accordance with the differential pressure to be sensed.
|
