| 摘要 |
A detecting element for sensing the presence of higher than normal concentrations of ozone in air at ambient temperatures and pressures. The element is formed of a "lower" oxide of a semiconductor having a variable valence. In the presence of ozone, two free electrons in the conductive band of the semiconductor combine with dissociated atomic oxygen to form a "higher" oxide of the semiconductor thereby changing the conductivity of the element. At least two electrodes are placed in spaced apart contact with the element to permit a current to be passed therethrough whereby the change in conductivity can be discerned.
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