SEMICONDUCTOR DEVICE WITH BARRIER IMPERVIOUS TO FAST IONS AND METHOD OF MAKING,申请号USD3512057-传众专利搜索

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发明名称	SEMICONDUCTOR DEVICE WITH BARRIER IMPERVIOUS TO FAST IONS AND METHOD OF MAKING
摘要
申请公布号	US3512057(A)	申请公布日期	1970.05.12
申请号	USD3512057	申请日期	1968.03.21
申请人	TELEDYNE SYSTEMS CORP.	发明人	OWEN W. HATCHER JR.
分类号	H01L23/29;H01L29/00;(IPC1-7):H01L11/00;H01L11/14	主分类号	H01L23/29
代理机构		代理人
主权项
地址

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