MAKING METHOD OF REFLECTIONNPREVENTING FILM OF PHOTOELECTRIC CONVERTER

摘要

PURPOSE:To raise the efficiency of light reception, by dipping the light reception face of a photoelectric converter in a mixed solution of hydrofluoric acid and nitric acid at a prescribed ratio when making a reflection-preventing film for the photoelectric converter having a silicon crystal substrate. CONSTITUTION:An n-type layer is produced on a p-type silicon crystal substrate so that a solar battery is manufactured by a conventional method. The solar battery is dipped in a mixed solution of 100 parts by volume of hydrofluoric acid and 0.5- 3.0 parts by volume of nitric acid for several to scores of seconds. As a result, a bluish film is produced on the surface of the solar battery. The film acts to prevent reflection. As for a pn junction type solar battery having an n-type layer on its light reception face, such dipping treatment is effected while an inverse bias of 0.5-0.1V is applied to the pn junction. As for a pn junction type solar battery having a p-type layer on the light reception face, such dipping treatment is effected while strong light is irradiated upon the light reception face. A uniform film is thus produced.