| 发明名称 |
HALBLEITERANORDNUNG |
| 摘要 |
<p>A transistor in which this effective emitter resistance which is determined by the geometry of the emitter metallization as disclosed. In the preferred embodiment, the emitter metallization comprises a series of circular "dots" which are distributed over the entire emitter area. The area of the "dots" with respect to the entire emitter area is selected such that the desired effective emitter resistance is achieved.</p> |
| 申请公布号 |
DE2944069(A1) |
申请公布日期 |
1980.05.14 |
| 申请号 |
DE19792944069 |
申请日期 |
1979.10.31 |
| 申请人 |
WESTINGHOUSE ELECTRIC CORP. |
发明人 |
L. HOWER,PHILIP;J. PAGE,DERRICK |
| 分类号 |
H01L29/41;H01L21/331;H01L23/48;H01L23/482;H01L29/417;H01L29/73;H01L29/74;(IPC1-7):H01L29/72;H01L29/52 |
主分类号 |
H01L29/41 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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