发明名称 |
VERFAHREN ZUR HERSTELLUNG VON ELEKTRISCHEN KONTAKTEN AN HALBLEITERBAUELEMENTEN |
摘要 |
<p>A process for the manufacture of electrical contacts on semiconductor components, wherein a metallic layer is placed upon the surface of the semiconductor component with which contact is to be made, which layer is then sintered by heating to a predetermined temperature, characterized by the fact that the heating done for sintering purposes takes place by means of irradiation with laser light directed only upon the metallic layer, the intensity of the laser light being sufficient to bring the metallic layer and the semiconductor material to the melting point.</p> |
申请公布号 |
DE2849716(A1) |
申请公布日期 |
1980.05.14 |
申请号 |
DE19782849716 |
申请日期 |
1978.11.16 |
申请人 |
BBC AG BROWN,BOVERI & CIE |
发明人 |
VON,DR. ALLMEN,MARTIN;WITTMER,MARC,DR. |
分类号 |
H01L21/52;H01L21/268;H01L21/28;H01L21/60;(IPC1-7):H01L21/60 |
主分类号 |
H01L21/52 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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