发明名称 FORMING METHOD FOR INSULATING OXIDE FILM COATING ON SUBSTRATE SURFACE
摘要 PURPOSE:To form an insulating oxide film coating excellent in adhesion property uniformly on the surface of substrates, by producing glow discharge between heated electroconductive substrates held in a vacuum vessel as an cathode and the vessel as an anode, and by introducing reaction gas into the vessel. CONSTITUTION:Plural substrates 5 are fixed to a cathode 9 set in a vacuum vessel 6 made of stainless steel etc. After the vessel 6 is evacuated to a vacuum, a gas mixt. composed of AlCl3, H2, CO2, and if necessary CO, is introduced through a gas inlet 11 to a gas press. of 10<-1>-10mmHg. At the same time, the substrates 5 are heated to a temp. 200-700 deg.C by means of an outside heater 7, and a voltage of 200V-3KV is applied across the cathode 9 and the inner wall 8 of the vessel as an anode to form glow discharge. Hereby, an alpha-Al2O3 coating of uniform thickness, excellent in adhesion property and insulating property is formed on the surface of the substrates. To form SiO2 coating, a material gas mixt. composed of silane compounds, H2, CO2, and if necessary CO, is used.
申请公布号 JPS5562161(A) 申请公布日期 1980.05.10
申请号 JP19780133252 申请日期 1978.10.31
申请人 MITSUBISHI METAL CORP 发明人 OONISHI TAIJIROU;MURAI SHIYUNICHI;KIKUCHI NORIBUMI
分类号 C23C16/50;C23C16/40;C23C16/503 主分类号 C23C16/50
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