| 摘要 |
PURPOSE:To prevent a disconnection due to breakaway between a pad and an SiO2 film by providing an n<+> domain simultaneously with an emitter diffusion in the second island and forming an Al pad through putting Al in ohmic junction with the n<+> domain. CONSTITUTION:An n<+> buried layer 2 and an n epitaxial layer 3 are formed on P-type substrate 1, and islands 51, 52 are formed from being isolated by a P<+>-layer 4. A P-layer is then provided consecutively, an n<+> emitter layer 7 and a collector drawn layer 8 are diffused, an n<+>-layer 14 is provided in the island 52, an Al wiring 10 is put in ohmic junction to form an Al electrode 10a, which works as a pad. Since a eutectic of Al and Si is formed, the pad is powerful in adhesion and hence is not for breakaway. A disconnection fault is kept from arising accordingly. Then, the Al pad has been isolated so that the pad can be prevented from falling to the substrate potential, which applies not only for junctioning the Al wire but also for using Al and Cu bump electrodes. |
