| 摘要 |
PURPOSE:To reduce parasitic reactance generated at a T-type junction part by making a part, where characteristic impedance is higher than that of any other part on a transmission line, at a fixed position of the transmission line. CONSTITUTION:In order to reduce parasitic reactance XA, lead wires of diode 6 are used as they are and line width D2 of T-type junction part 3 provided on micro- strip line 2 of characteristic impedance Z0 constituted on insulating substrate 1 is thinned. To reduce parasitic reactance XB, a slit is provided to junction part 3 and line width D1 is thinned. Therefore, since the winding ratio of a transformer can be fixed to 1:1, characteristics of the diode can be utilized as they are for those of a switch. Further, rectangular, trapezoidal and semicircular slits may be used. |
