| 发明名称 |
Low barrier Schottky diodes |
| 摘要 |
A low barrier Schottky Barrier Diode (SBD) utilizing a metallurgical diffusion barrier between a transition metal barrier contact and an aluminum base land pattern to prevent interaction therebetween. The diffusion barrier comprises a discretely formed layer of an intermetallic of the transition metal and aluminum.
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| 申请公布号 |
US4201999(A) |
申请公布日期 |
1980.05.06 |
| 申请号 |
US19780944815 |
申请日期 |
1978.09.22 |
| 申请人 |
INTERNATIONAL BUSINESS MACHINES CORP |
发明人 |
HOWARD, JAMES K;TURENE, FRANK E;WHITE, JAMES F |
| 分类号 |
H01L21/28;H01L21/285;H01L29/47;H01L29/872;(IPC1-7):H01L29/48;H01L23/48;H01L29/56 |
主分类号 |
H01L21/28 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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