发明名称 DEVICE FOR GROWING MOLTEN EPITAXIAL GROWTH AND METHOD OF USING SAME
摘要 <p>In apparatus and a process for applying an epitaxial layer to a substrate (5) by means of melt epitaxy without the use of mechanically moving parts, two plate (1, 2) are spaced apart to form a gap (3) between them into which a melt (4) of the material to be deposited is introduced. The plates (1, 2) are of a material which is not wetted by the melt (4), so that the latter is transported by virtue of its surface tension to the substrate (5) which is carried by the lower plate (2). The plates (1, 2) may be parallel to one another, or arranged at an angle, the melt (4) then being introduced at the narrower end of the gap (3). <IMAGE></p>
申请公布号 JPS5559717(A) 申请公布日期 1980.05.06
申请号 JP19790137526 申请日期 1979.10.24
申请人 SIEMENS AG 发明人 IERUKU ENGENHAISUTAA
分类号 H01L33/00;C30B19/06;H01L21/208 主分类号 H01L33/00
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