| 摘要 |
PURPOSE:To obtain a device in which high resistor and a transistor are connected in parallel by forming a part of MISFET channel as a depletion type and the other part as an enhancement type. CONSTITUTION:Ions are implanted in a channel area with use of a resistmask and a part of an enhancement type is changed into an active dpletion type. This leads to a device in which an enhancement type FET is connected with the high resistance in parallel, as a whole. When this device is used in both the load side of an inverter circuit and a transistor T2, the leakage from an operating transistor T1 is compensated by a current in the depletion channel area of the transistor T2 so that output at OUT is able to be maintained at ''H'' level for a long period. Thus in the case of constituting a memory circuit, a refresh interval can be made wider. |
