| 摘要 |
PURPOSE:To simplify an alignment process by using a resist pattern for mask variant in film thickness partly after development one time of exposure which is obtainable through using an X-ray exposing mask having a plural kinds of absorber pattern variants in X-ray permeability. CONSTITUTION:A p<+>-type channel stopper domain 13 is formed through diffusion on both ends of a p-type Si substrate 11, and a thick SiO2 film 12 is grown thereon. Next, a thin gate SiO2 film 14 is sticked on the substrate 11, a multiple crystal Si layer 15 for gate electrode is deposited entirely, and an X-ray resist is applied thereon to exposure and development. For X-ray mask in this case, a mask substrate 1 provided with a thick full absorber 2 and a thin full absorber 3 is used, a thin resist layer 16' is formed on the gate electrode and a thick resist layer 16 on the other portion. Then, n<+>-type source drain region 17 and 18 are formed, the thin layer 16 is removed through exposure and development again, and Mo wiring metal 19 is provided on the exposed gate electrode 15. |
