发明名称 PREPARATION OF THIN FILM
摘要 PURPOSE:To prevent the aggregation of reaction product and atomization in vacuum and to manufacture a good quality thin film, by reacting the first molecular raw material gas with exciting substance mainly composed of radical formed by the discharge in the second raw material gas atmosphere, on the substrate under a specific vacuum degree. CONSTITUTION:The first raw material gas is introduced to the jetting part 8 from the vessel 7 and is mainly supplied toward the main face of the substrate 5 as the molecular beam 9. The second raw material gas is excited for ion or radical by the discharge in the discharge tube 11 and excited gas is gushed on the main face of the substrate 5 as the excited molecular beam 12 composed of radical mainly. On this occasion, reaction of the raw material gas is not taken place in vacuum by maintaining the apparatus under high vacuum so as to make the mean free distance of molecule in vacuum large compared with the distance from jetting nozzle of each beam 9, 12 to the substrate. Accordingly, reaction product is aggregated and is not accumulated on the substrate in impalpable powder followed by decomposition reaction, thus the resulting product being accumulated on the substrate 5 as the atom composing thin film.
申请公布号 JPS5558362(A) 申请公布日期 1980.05.01
申请号 JP19780132153 申请日期 1978.10.26
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 NAGATA SEIICHI;MORI KOUSHIROU;FUKAI SHIYOUICHI
分类号 C23C16/50;C23C16/511;C23C16/513 主分类号 C23C16/50
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