Method for producing a semiconductor film.

摘要

The invention provides a method of producing a stabilized photoconducting semiconductor film by electroplating onto a cathode body. The film is of amorphous silicon containing hydrogen. A solution (16) of a halogenated silane, and/or silicon halide, in an aprotic solvent containing a tetrabutylammonium salt is electroysed, in a nitrogen atmosphere, using a platinum anode (20) and nichrome cathode (26). The plated cathode is removed to a nitrogen-containing chamber (128), and the chamber purged with helium or hydrogen. Cathode (26) is then removed to a heating chamber (30) and heated in the presence of helium or hydrogen at above 250 DEG C, preferably 350 DEG C for thirty minutes. The silicon film is thereby stabilized chemically and physically. Subsequently, a pellucid layer of high work function, for example of platinium, iridium or palladium, can be deposited on the thus stabilized film to produce a photovoltaic device.