| 摘要 |
<p>PURPOSE:To reduce the impaired portion of an element forming surface in a chip by half-cutting a semiconductor wafer, leaving the thickness only of a section to be not broken by vibrations, supplying the colloidal solution of abrasives and abrading the residual thickness and cutting the wafer by a blade. CONSTITUTION:The height of a blade 22 is adjusted to the extent that a wafer 30 of the thickness of 490mum is cut and only the thickness of 10-20mum is left, and the blade 22 is moved in the direction of the arrow X1 for forming a groove on the wafer 30. The height of the blade 22 is adjusted so as to leave the wafer 30 only by the thickness of several mum, a nozzle 27 is opened together with nozzle 25, 26 and a colloidal solution is discharged, and a blade 22 is crawlingly moved in the direction of the arrow X2 in the half-cut groove. At this time, the blade 22 is not brought into direct contact with the wafer 30, but the colloidal solution is drawn into the revolution of the blade 22 by a hydroplaning phenomenon and flows at high speed into the groove being cut on the wafer 30, and the wafer 30 is abraded by the colloidal particles of silicon and then cut.</p> |
