发明名称 SI3N4 FORMED BY NITRIDATION OF SINTERED SILICON COMPACT CONTAINING BORON
摘要 <p>A polycrystalline silicon nitride body is produced by shaping a particulate mixture of silicon powder and boron into a green body, sintering the body to a density ranging from 60% to 75% of the theoretical density of silicon, said sintered body having pores which are interconnecting and open to the surface of the body, and reacting said sintered body with gaseous nitrogen to convert it to silicon nitride.</p>
申请公布号 CA1076611(A) 申请公布日期 1980.04.29
申请号 CA19760268971 申请日期 1976.12.30
申请人 GENERAL ELECTRIC COMPANY 发明人 GRESKOVICH, CHARLES D.;PROCHAZKA, SVANTE
分类号 C04B35/591;(IPC1-7):04B35/58 主分类号 C04B35/591
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