| 摘要 |
PURPOSE:To prevent the formation of difference in level and the breaking of wire by forming second transfer electrodes on a second flat insulating film. CONSTITUTION:A group of recesses having a depth of about 3,000Angstrom and width of about 10mu is provided in an n-type Si substrate 10 and covered by a heat oxidized film 12. First transfer electrodes 13 made of poly Si of about 3,000Angstrom are provided to burry the recesses. After a heat oxidized film 14 is formed on all over the surface, second transfer electrodes 15 made of Al and the like of about 3,000Angstrom are made on the film 14. If necessary, a CVD oxidized layer with the thickness of about 1,000Angstrom is stacked on it. In this constitution, the breaking of wire is not resulted in the second transfer electrodes and also the breaking of the conductors on the protective surface is not resulted. |
