| 摘要 |
PURPOSE:To change the transfer direction without decreasing transfer efficiency in a simple architecture by coupling n th and (n+1)th transfer channels by a substrate and an inverse-conductive layer and generating a potential barrier behind the transfer direction of electric charges in a semiconductor layer directly under transfer electrodes. CONSTITUTION:Charge transfer channels 41 and 42 are defined by a channel stopper 43, covered by transfer electrodes 31-38, and driven in two phases through a conductive-wire group. The channels 41 and 42 are coupled by a substrate 51 and an inverse conductive layer 46. The transfer electrode 34 on the channel 41 is located adjacent to the layer 46, and provided with a charge storage layer 34b directly under the electrode 34 and adjacent to the layer 46 and also a potential-barrier generating means 34a adjacent to the charge storage layer 34b. The electrode 35 on the channel 42 is likewise provided with a potential-barrier generating means 35a and a charge storage layer 35b adjacent to the layer 46, and other transfer electrodes have the same constitution. In this constitution, the signal charges behave as majority carriers in the layer 46 which changes the transfer direction, and the charge movement in the layer 46 is so quick that the time required is negligibly small with almost no transfer loss. |
