Solar cell with increased efficiency - has buried metal finger electrode system to reduce charge carrier diffusion path length

摘要

Solar cell with increased efficiency consists of a semiconductor conductor device, in which the active regions, in which charge carriers are produced by the incident and penetrating energy, are in at least one electrically insulating layer parallel to the surface. The current produced by the charge carriers is removed by a metal finger system, which is buried in the semiconductor body, instead of applied to its surface. The diffusion path length of the charge carriers to the contacts is shorter than ususal, which increases the efficiency of the cell. The contacts are pref. formed as Schottky contacts or have MIS structure. The insulating layer consists of a double layer of Si oxide and Si3N4 and/or Si oxynitride (produced reaction silane with NH3 and/or O2 in a glow discharge and tempering at 400 degrees C) whilst the semiconductor body consists of mono- or polycrystalline or amorphous Si, Ge or AIIIBV cpds.