| 摘要 |
PURPOSE:To obtain a memory device where a low-speed operation can be performed and the occupied area is small, by setting current rise of two transistors, which constitute a flip flop-type memory cell, unbalanced and connecting another transistor to collectors of them to perform read operation. CONSTITUTION:NPN transistors T1 and T2 have emitters connected commonly and have bases connected to collectors of each other, and one of them becomes non-conductive when the other becomes conductive, and they form an FF memory. Storage contents of transistors T1 and T2 are read out from digit line D through reading NPN transistor T6 by a low-speed operation without using a complicated sensor and utilizing the electrostatic capacity when first and second line selection lines R and W are made high-potential. Write through PNP transistor T5 is also performed well by current rise unbalance dependent upon the base region difference of transistors T1 and T2, etc. Further, line selection line R extends to insulating region 32 of the collector of T6 and is used for jumper function, so that the cell may be small-size furthermore. |
