| 摘要 |
A polycrystalline semiconductor sheet may be converted to a macrocrystalline or monocrystalline semiconductor sheet through use of a controlled melt perturbation in the sheet. The process is initiated by formation of a small melt area generally in the center of the sheet of polycrystalline material and then by controlled sweeping motions a molten zone is ultimately formed across the entire width of the sheet. As the molten zone is allowed to solidify crystals of large size are formed, and with proper control of this crystal, can grow across the entire width of the polycrystalline sheet, or at least crystals of sufficiently large size for production of semiconductor activity may be produced. Following formation of macrocrystalline material across the width of the sheet the perturbation may be continued throughout the process to sweep any dislocations or crystal boundaries to the edge of the sheet where they may be trimmed from the remainder of the material as desired. This process allows formation of a highly modified macrocrystalline semiconductor material without requiring use of a seed crystal.
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