| 摘要 |
PURPOSE:To obtain ROM of high integration by decreasing a current at the time of programming by storing logical binary information in FET having a floating gate, by applying an electric field of a fixed level between the gate and source or drain of FET. CONSTITUTION:On substrate 1, source 2, drain 3 and field oxide film 4 are formed and insulating layer 5 of fixed thickness is also formed between films 4. At a position of layer 5 away from a drain 3 side, floating gate 6 of a metal is bonded, insulating layer 7 is formed to a fixed thickness on the upper layer of this gate 6 and that of layer 5 without applied gate 6, and control gate 8 is formed on this layer 7. Further, contact holes 3a and 2a are formed which penetrate layers 5 and 7 and then reach drain 3 and source 2 and between gate 8 and source 2 or drain 3, high- tension pulses of a fixed level are applied by turns to store binary information in FET forming ROM by a small current. |
