| 摘要 |
PURPOSE:To reduce the power consumption of a static semiconductor memory by controlling the switching of a switch element by a failure voltage at a PN junction part and fixed voltage. CONSTITUTION:Gate electrode A of IGFETQ4 is connected to N-type impurity region 5b in P-type silicon substrate 1 and IGFETs Q1 and Q2 sharing region 5b as a common electrode are connected in series between a current source and the earth. With switch SW open, transistors Q1 and Q2 are both OFF and FETQ4 turns ON by being applied with a failure voltage more than a threshold level from a PN junction part formed of substrate 1 and region 5b. With switch SW closed, transistors Q1 and Q2 conduct to apply a reverse voltage to the PN junction and transistor Q4 turns OFF. Therefore, the switching of the swmiconductor switch is controlled by the failure voltage and an external reverse voltage decreasing the failure voltage below the threshold level, so that the power consumption of a static memory using the semiconductor switch can be reduced. |
