RESIST PATTERN FORMING METHOD

摘要

PURPOSE:To simply enhance the contrast of a photoresist and to stably form a fine resist pattern having a high aspect ratio with high reproducibility by transferring a pattern to the surface of the photoresist by exposure and by irradiating the entire surface of the photoresist with UV of first wavelength and UV of second wavelength. CONSTITUTION:A substrate 1 is coated with a photoresist contg. novolak resin and a quinone diazide type sensitizer, a prescribed pattern is transferred to the surface of the photoresist by exposure and the entire surface of the photoresist is irradiated with UV of first wavelength having enough energy to generate photosensitive radicals in the photoresist and UV of second wavelength penetrating into the photoresist by >=10% while heating the substrate 1 in a nitrogen atmosphere. The photoresist 2 is then developed developed to form a resist pattern 2. The photoresist has a significant light absorbing effect and the resist pattern having a high aspect ratio can stably be formed even in case of a thick resist film.