| 发明名称 |
DEVICE |
| 摘要 |
PURPOSE:To increase the scale of integration of a MOS IC by depositing an insulation oxide film on source and drain regions and the region extending over these regions and forming a thin polycrystalline Si gate electrode and further a thick polycrystalline Si wiring layer over said film. |
| 申请公布号 |
GB1564784(A) |
申请公布日期 |
1980.04.16 |
| 申请号 |
GB19770012088 |
申请日期 |
1977.03.22 |
| 申请人 |
TOKYO SHIBAURA ELECTRIC CO LTD IC |
发明人 |
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| 分类号 |
H01L29/78;H01L21/3205;H01L21/336;H01L23/52;H01L23/528;H01L29/49;(IPC1-7):01L29/60 |
主分类号 |
H01L29/78 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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