| 摘要 |
PURPOSE:To provide a semiconductor device in which high resistance is obtained thereby to produce high density integration and easily control the resistance values by forming a resistance with polysilicon comprising an element which may produce an insulator by chemical combination with silicon. CONSTITUTION:In a zone formed as surrounded by field oxide films 12 in the surface of a silicon substrate 11 of one conductive type, for example, the p-type is formed a zone 13 into which impurities of the other conductive n<+>-type have been doped, and the surfaces of the film 12 and the zone 13 are covered with an oxide film 14. Then an approximately 6,000Angstrom polysilicon film 15 is grown through an opening provided in the oxide film 14, and nitrogen is implanted thereinto, for example, in an amount of 1X10<17>cm<2> at 150keV. The resulting polysilicon film is subjected to patterning to selectively form an aluminum wiring 17. Thus a high resistance is available to the device with smaller dimensions. This polysilicon resistance can be formed simultaneously with silicon gate in MOSFET's, and applied to a load transistor in static MOS memories. |
