发明名称 PHOTO MASK
摘要 PURPOSE:To form circuit patterns of even accuracy and improve the yield of integrated circuits by providing films of a constant thickness to the shield type pattern parts of the peripheral part and inside of a mask at the time of making the photo mask used for production of thin film integrated circuits. CONSTITUTION:After silver salt emulsion or the like 2 is deposited on a substrate 1 such as of Myler film or other, desired circuit patterns are formed thereon. Next, a smooth metal film or organic film 7 having a constant thickness is formed on the peripheral part and inside of the non-transmission portions of said patterns by such a method as adhesive agents or vapor deposition. On a ceramic substrate 3 for hybrid integrated circuits a metal thin film 4 is deported and further photo resist 5 is formed, and after these are fixed to a substrate holder 6, the photo mask thus made is superposed and pressured from the arrow direction. In this way, the transparent pattern parts of the mask do not adhere to the photo resist 5 and only the film 7 on the non-transparent portions adheres. Hence, surface peeling, staining, etc. of the resist 5 are prevented, the staining of mask surface is obviated and multiple sheets of the inte grated circuits of good accuracy may be produced from the same mask.
申请公布号 JPS5552060(A) 申请公布日期 1980.04.16
申请号 JP19780125566 申请日期 1978.10.11
申请人 NIPPON ELECTRIC CO 发明人 KIYOUNO MASAO;OKAMOTO SUSUMU
分类号 G03F1/00;G03F1/54;H01L21/027;H01L21/308 主分类号 G03F1/00
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