| 摘要 |
An image forming material comprising a support having thereon a layer composed of a Ge-S composition or a Ge-S-X composition wherein X represents at least one element selected from the group consisting of Al, Si, Mg, Ti, V, Mn, Co, Ni, Sn, Zn, Pd, In, Se, Te, Fe, I, P and O which undergoes a structural change capable of being detected optically, electrically or chemically upon exposure imagewise to light wherein the Ge-S or Ge-S-X composition layer has a thickness of at least about 300A and contains therein at least one element selected from the group consisting of Ag, Cu and Pb in an amount of more than 2 atoms of Ag, Cu and/or Pb based on 100 atoms of the Ge-S composition or the Ge-S-X composition.
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