发明名称 DRIVE METHOD OF MIM STRUCTURE ELEMENT
摘要 PURPOSE:To enable an element to display a multi-value recording property without a complicate manufacturing process and making it subject to much restriction for a practical use by a method wherein a sweep voltage of various ranges or a pulse voltage of various volts is applied to an element of an MIM structure where an organic insulating layer is pinched between a pair of electrodes. CONSTITUTION:An element of an MIM structure is composed of, for instance, a substrate 2, a lower electrode 9, an upper electrode 8, and a molecular laminated film layer 10. When a sweep voltage of various ranges or a pulse voltage of various volts is applied to the element, it is preferable that the voltage is within the range of + or -30V. And, the pulse voltage applied for 10nsec-1sec is adequate, and it is more preferable that it is applied for 100nsec-1sec. The MIM structure element of this design is made to display a non-linear type current voltage characteristic different from a conventional one by applying the above voltage. That is, the element shows three or more conductivities corresponding to various applied voltages, and the conductivities are possessed of a memorable property.
申请公布号 JPH01245578(A) 申请公布日期 1989.09.29
申请号 JP19880071763 申请日期 1988.03.28
申请人 CANON KK 发明人 YANAGISAWA YOSHIHIRO;KAWADE ISAAKI;SAKAI KUNIHIRO;MATSUDA HIROSHI;KAWADA HARUNORI;TAKIMOTO KIYOSHI;MORIKAWA YUUKO;EGUCHI TAKESHI
分类号 H01L51/05;B05D1/20;G11C11/56;G11C13/02;H01L45/00;H01L49/02;H01L51/30;(IPC1-7):H01L49/02;H01L29/28 主分类号 H01L51/05
代理机构 代理人
主权项
地址