发明名称 ALUMINUM METAPHOSPHATE SOURCE BODY FOR DOPING SILICON
摘要 <p>A solid source consisting essentially of high purity aluminum metaphosphate, Al(PO3)3 is used for introducing elemental phosphorous into "P"-type silicon chips or wafers of semi-conductor grade. The aluminum metaphosphate functions as a source for the controlled release of P2O5 vapors which are directed to the desired face of the silicon wafer. The reverse side of the silicon wafer receives little or no phosphorous and consequently retains its character as "P"-type silicon.</p>
申请公布号 CA1075435(A) 申请公布日期 1980.04.15
申请号 CA19780313895 申请日期 1978.10.23
申请人 OWENS-ILLINOIS, INC. 发明人 FLORENCE, JACK M.;SMITH, WILLIAM E. (DECEASED)
分类号 (IPC1-7):01J17/40 主分类号 (IPC1-7):01J17/40
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