| 摘要 |
PURPOSE:To obtain a stable high resistance element by controlling the mixing ratio of spin-on glass containing phosphorus or arsenic. CONSTITUTION:A PSG film 3 is patterned through photoetching. A CVD insulating film is formed onto a pattern, and a contact hole is bored through photoetching in the CVD insulating film just above the PSG film 3. A carrier- doped polysilicon or aluminum film, serving as an upper electrode 2 in a subsequently shaped resistor, is formed and patterned. The PSG film 3 between the upper electrode 2 and a lower electrode 4 is used as the resistor at that time. The ions of <31>P<+> or <11>B<+> are implanted selectively to a spin-on-glass film composed of SiO2 and thermally annealed in a forming method for the PSG film. |
