| 摘要 |
A mask for soft X-rays comprising a silicon film which permits the penetration of soft X-rays, a soft X-ray mask pattern deposited on one surface of the silicon film, and a supporting member composed of silicon layers and disposed marginally on the other surface of the silicon film, the silicon film being formed on the supporting member by epitaxial growth or impurity diffusion. A method of making a mask for soft X-rays which comprises the steps of successively forming a first and a second layer on a silicon substrate by epitaxial growth or the like, the first and second layers having different impurity concentrations; forming a soft X-ray mask pattern on the second layer; etching the silicon substrate selectively to remove the silicon substrate except its marginal region; and etching the first layer.
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