发明名称 |
GLASS PASSIVATED JUNCTION SEMICONDUCTOR DEVICES |
摘要 |
<p>W.E. 47 ,154 This invention is directed to a semiconductor devise comprised of a body of semiconductor material having at least one p-n junction terminating at an exposed surface of the body. The p-n junction is passivated at its termination point by a first, thin glass layer and a second glass layer disposed over the first thin glass layer. The second glass layer is thicker than the first glass layer and includes a predetermined amount of a suitable filler material.</p> |
申请公布号 |
CA1075830(A) |
申请公布日期 |
1980.04.15 |
申请号 |
CA19770278523 |
申请日期 |
1977.05.16 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
FUNAKAWA, SHIGERU;YAMANE, MASAHIRO |
分类号 |
H01L21/301;H01L21/316;H01L21/329;H01L21/56;H01L23/31;H01L29/06;(IPC1-7):01L27/04 |
主分类号 |
H01L21/301 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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