发明名称 GLASS PASSIVATED JUNCTION SEMICONDUCTOR DEVICES
摘要 <p>W.E. 47 ,154 This invention is directed to a semiconductor devise comprised of a body of semiconductor material having at least one p-n junction terminating at an exposed surface of the body. The p-n junction is passivated at its termination point by a first, thin glass layer and a second glass layer disposed over the first thin glass layer. The second glass layer is thicker than the first glass layer and includes a predetermined amount of a suitable filler material.</p>
申请公布号 CA1075830(A) 申请公布日期 1980.04.15
申请号 CA19770278523 申请日期 1977.05.16
申请人 MITSUBISHI DENKI KABUSHIKI KAISHA 发明人 FUNAKAWA, SHIGERU;YAMANE, MASAHIRO
分类号 H01L21/301;H01L21/316;H01L21/329;H01L21/56;H01L23/31;H01L29/06;(IPC1-7):01L27/04 主分类号 H01L21/301
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