发明名称 |
METHOD OF HEAT TREATING SEMICONDUCTOR ELEMENT |
摘要 |
An improved method for the heat treatment of quartz-glass tubes at temperatures above 1200 DEG C. is disclosed wherein a pressure is maintained within the glass tube which is 3 to 110 mm Hg higher than the pressure on the external surface of the quartz tube over the heated area of the tube for at least the length of time that a temperature of 1200 DEG C. is exceeded. The process is particularly useful for the treatment of quartz-glass tubes within which silicon wafers are disposed for the purpose of diffusing doping agent into silicon wafers or of depositing doped epitaxial layers on silicon wafers. |
申请公布号 |
JPS5550620(A) |
申请公布日期 |
1980.04.12 |
申请号 |
JP19790126906 |
申请日期 |
1979.10.03 |
申请人 |
HERAEUS SCHOTT QUARZSCHMELZE |
发明人 |
KARURU AA SHIYURUKE |
分类号 |
H01L21/205;C30B31/10;C30B31/18;H01L21/22;H01L21/324 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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