| 摘要 |
<p>The invention provides a method for bonding a refractory metal contact 18'/20' to a semiconductor body 12' in which a silver-germanium alloy 44/46 is interposed between the surface of the refractory metal contact member and the surface of the semiconductor body. The assembly is then heated until the alloy enters the slush state. The assembly is thereafter rapidly quenched to freeze the alloy, thereby forming a high-strength bond. Typically, the alloy comprises 85-99% Ag and 15-1% Ge. In one example, the assembly is heated to a temperature of about 835 DEG C. <IMAGE></p> |
