| 摘要 |
PURPOSE:To enable to increase dv/dt rating and gate trigger sensitivity even at high temperature, by providing the semiconductor switch of PNPN constitution, resistor, electric short circuit means and capacitive circuit. CONSTITUTION:The resistor R2 is connected to the cathode K1 being one major terminal of the semiconductor switch (PNPN) 1, to build up a new cathode K2, and the resistor R1 being the short circuit means is connected between the cathode gate GK and K2, and the capacitor C1 is connected as the capacitive circuit between the anode gate GA and K1. When the forward transient voltage with steep rising is fed to the switch 1, the transient current flows to R1 through the second junction capacitor of the switch 1 and the potetial of GK is increased, but since the transient current flows to R2 via C1, the potential of GK is increased. That is, since any potential of GK and K1 are increased, then the voltage between GK and K1 is not great so much to increase dv/dt. Since this is almost independent on temperature, sufficiently greater dv/dt rating can be obtained. |
