| 摘要 |
PURPOSE:To obtain the good corrosion resistant transparent conductive film of low resistance value by sputtering the material comprising Ta2O5 at 1-10wt% to TiO2 in the atmosphere added with O2 so as to have a partial pressure of 0.1-10% in Ar gas. CONSTITUTION:The material comprising adding Ta2O5 at 1-10wt% (about 6wt% to obtain the lowest resistance value) to TiO2 is used as a target material. This material is sputtered in an atmosphere comprising adding O2 to Ar gas so as to have a partial pressure of 1 to 0.1-10% (about 4% in order to obtain the minimum resistance value), whereby the corrosion-resistant transparent conductive film is obtained. In this way, the high resistance value, poor reproducibility and difficulty in practiable use in the case of TiO2 alone are solved by addition of Ta2O5 and the conductive film of superior corrosion resistance and heat resistance used for liquid crystal display device, etc. is obtained. |
