| 摘要 |
<p>Improvement of the surfaces of ceramic oxides (Al or Be) by coating with a layer of Ta oxide then annealing at over 1,000 degrees C. The oxide layer is formed by (a) spraying with Ta to give 500-800 angstroms thick coating and oxidising, (b) dipping in Ta alkylate solns. and oxidising, (c) hydrolysis of Ta halogenide and sintering etc. Used for the prodn. of thin film condensers and resistors.</p> |
