| 发明名称 |
SEMICONDUCTOR ISOLATION METHOD |
| 摘要 |
<p>A semiconductor device in which a zone of insulating material separates two deep regions from each other. The inversion layer which is caused at the edge of the insulating layer is compensated by means of a layer obtained via ion implantation prior to providing an epitaxial layer.</p> |
| 申请公布号 |
CA1075374(A) |
申请公布日期 |
1980.04.08 |
| 申请号 |
CA19770271539 |
申请日期 |
1977.02.10 |
| 申请人 |
N.V. PHILIPS'GLOEILAMPENFABRIEKEN |
发明人 |
DE BREBISSON, MICHEL |
| 分类号 |
C30B19/00;C30B25/18;C30B31/22;H01L21/205;H01L21/74;H01L21/76;H01L21/762;(IPC1-7):01L21/94 |
主分类号 |
C30B19/00 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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